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Serie/Typ	Hersteller	Produktgruppe	Artikelkategorie	Hauptkategorie	Gehäusetyp	Sperrspannung [V]	RDS on [mOhm]	Nennstrom [25°]	Produkt Feature
G3R20MT12K	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	TO-247-4	1200	20	100	-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested	Anfragen
G3R20MT12N	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	SOT-227	1200	20	90	-G3R™ Technology with +15 V Gate Drive -Softer RDS (ON) v/s Temperature dependency -LoRing™ - Electromagnetically Optimized Design -Smaller RG(INT) and Lower QG -Low Device Capacitances (Coss, CRSS) -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -Isolated Back-side	Anfragen
G3R30MT12J	GeneSiC	Diskret	SiC Mosfets	Aktive Komponenten	TO-263-7	1200	30	85	-G3R™ (3rd Generation) Technology -Low Temperature Coefficient of RDS (ON) -Lower QG and Smaller RG(INT) -Low Device Capacitances (Coss, CRSS) -LoRing™ - Electromagnetically Optimized Design -Superior Cost-Performance Index -Robust Body Diode with Low VF and Low QRR -100% Avalanche (UIL) Tested	Anfragen

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